型号:

FQB8N60CTM

RoHS:无铅 / 符合
制造商:Fairchild Semiconductor描述:MOSFET N-CH 600V 7.5A D2PAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
FQB8N60CTM PDF
产品培训模块 High Voltage Switches for Power Processing
产品变化通告 Design/Process Change Notification 26/June/2007
标准包装 1
系列 QFET™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 600V
电流 - 连续漏极(Id) @ 25° C 7.5A
开态Rds(最大)@ Id, Vgs @ 25° C 1.2 欧姆 @ 3.75A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 36nC @ 10V
输入电容 (Ciss) @ Vds 1255pF @ 25V
功率 - 最大 3.13W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 TO-263(D2Pak)
包装 剪切带 (CT)
其它名称 FQB8N60CTMFSCT
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